InGaAS-APD modullari seriyasi
Fotoelektrik xarakteristikalar (@Ta=22±3℃) | |||
Model | GD6510Y | GD6511Y | GD6512Y |
Paket shakli | TO-8 | TO-8 | TO-8 |
Fotosensitiv sirt diametri (mm) | 0.2 | 0,5 | 0,08 |
Spektral javob diapazoni (nm) | 1000 ~ 1700 | 1000 ~ 1700 | 1000 ~ 1700 |
Buzilish kuchlanishi (V) | 30~70 | 30~70 | 30~70 |
Javobgarlik M=10 l=1550nm(kV/Vt) | 340 | 340 | 340 |
Ko'tarilish vaqti (ns) | 5 | 10 | 2.3 |
Tarmoqli kengligi (MGts) | 70 | 35 | 150 |
Ekvivalent shovqin kuchi (pW/√Hz) | 0,15 | 0,21 | 0,11 |
Ish kuchlanishining harorat koeffitsienti T = -40 ℃ ~ 85 ℃ (V/℃) | 0,12 | 0,12 | 0,12 |
Konsentriklik (mkm) | ≤50 | ≤50 | ≤50 |
Dunyo bo'ylab bir xil ishlashning muqobil modellari | C3059-1550-R2A | / | C3059-1550-R08B |
Old tekislik chipining tuzilishi
Tez javob
Detektorning yuqori sezuvchanligi
Lazer diapazoni
Lidar
Lazerli ogohlantirish
Old tekislik chipining tuzilishi
Tez javob
Detektorning yuqori sezuvchanligi
Lazer diapazoni
Lidar
Lazerli ogohlantirish